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HiPerFET TM
Power MOSFETs
Q-Class
IXFH 80N10Q
IXFT 80N10Q
V DSS
I D25
R DS(on)
= 100 V
= 80 A
= 15 m W
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
t rr ￡ 200ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
100
100
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 20
± 30
80
320
80
30
1.5
V
V
A
A
A
mJ
J
TO-268 (IXFT) Case Style
(TAB)
dv/dt
P D
T J
T JM
T stg
T L
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
5
360
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
(TAB)
M d
Weight
Mounting torque
(TO-247)
TO-247 AD
TO-268
1.13/10 Nm/lb.in.
6 g
4 g
? IXYS advanced low gate charge
process
? International standard packages
? Low gate charge and capacitance
- easier to drive
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- faster switching
? Low R DS (on)
? Unclamped Inductive Switching (UIS)
V DSS
V GS = 0 V, I D = 250 m A
100
V
rated
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
2.0
4
± 100
25
1
15
V
nA
m A
mA
m W
? Molding epoxies meet UL 94 V-0
flammability classification
Advantages
? Easy to mount
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98592B (7/00)
1-2
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